Belyaev M., Velichko A., Boriskov P., Kuldin N., Putrolaynen V., Stefanovitch G. The Field Effect and Mott Transistor Based on Vanadium Dioxide // Journal on Selected Topics in Nano Electronics and Computing. 2014. Vol. 2. № 1. P. 26—30, DOI: 10.15393/j8.art.2014.3045


Issue № 2

Nanoelectronics and related issues of nanotechnology

The Field Effect and Mott Transistor Based on Vanadium Dioxide

Belyaev
   M. A.		Petrozavodsk State University, biomax89@yandex.ru
Velichko
   A. A.		Petrozavodsk State University, velichko@psu.karelia.ru
Boriskov
   P. P.		Petrozavodsk State University, boriskov@psu.karelia.ru
Kuldin
   N. A.		Petrozavodsk State University, kuldin@psu.karelia.ru
Putrolaynen
   V. V.		Petrozavodsk State University, vputr@psu.karelia.ru
Stefanovitch
   G. B.		Petrozavodsk State University, gstef@psu.karelia.ru
Key words:
metal-insulator transition
vanadium dioxide
field effect transistor
space charge region		 Summary: The paper presents simulation results of the field control of phase metal-insulator transition in transistor structures based on vanadium dioxide. The calculations of the field and the electron density in the space charge region in the metallic (M) and semiconducting (S) phases are given. It is shown that the field control of the phase transition at room temperature in the forward direction (from S- to M-phase) inefficiency due to the strong screening of the space charge on the Debye length does not exceed two unit cell of VO2.

© Petrozavodsk State University
Is passed for the press: 30 june 2014 year