|Petrozavodsk State University, email@example.com|
|Petrozavodsk State University, firstname.lastname@example.org|
|Petrozavodsk State University, email@example.com|
|Petrozavodsk State University, firstname.lastname@example.org|
transition metal oxides
Summary: In this paper we report on the study of electrical switching in thin film MOM structures on the basis of transition metal oxides under AC conditions. The materials studied are Nb2O5, TiO2, and WO3, obtained by electrochemical oxidation of the metal, as well as MoO3, obtained by thermal deposition in vacuum. Transformations of dynamic switching characteristics with changes in temperature and frequency are investigated. The possibility of appearance of both monostable switching and memory switching in the same material is shown. It is also shown that doping of film structures of anodic titanium oxide with aluminum ions leads to a significant stabilization of dynamic current-voltage characteristics and long-term reproducible operation of the switching structures metal/TiOx:Al /metal.
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Is passed for the press: 28 december 2014 year