Pergament A., Stefanovich G., Velichko A. Oxide Electronics and Vanadium Dioxide Perspective: A Review // Journal on Selected Topics in Nano Electronics and Computing. 2013. Vol. 1. № 1. P. 24—43, DOI: 10.15393/

Issue № 1

Nanoelectronics and related issues of nanotechnology

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Petrozavodsk State University,
Petrozavodsk State University,
Petrozavodsk State University,
Key words:
Oxide electronics
Mott transition FET
metal-insulator transition
transition metal oxides
vanadium dioxide
Summary: Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of d-electrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electron-electron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Mott-transition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and near-term outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO2-based MTFETs.

© Petrozavodsk State University

Is passed for the press: 16 december 2013 year